VEC2818
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF
IR
C
trr
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.3A, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
IS=--3.5A, VGS=0V
IR=2mA
IF=2A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
--20
--0.4
3.5
5.8
55
77
112
680
115
80
12
57
68
58
8.7
1.5
1.8
--0.83
V
--1 µA
±10 µA
--1.4
V
S
72 mΩ
108 mΩ
168 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
30
V
0.4
0.45
V
1.25 mA
75
pF
20 ns
Package Dimensions
unit : mm (typ)
7012-005
0.3
0.15
8 7 65
1234
0.65
2.9
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
SANYO : VEC8
Electrical Connection
8
7
6
5
1
2
3
4
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
Top view
No. A0577-2/6