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IRF1404LPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRF1404LPBF
IR
International Rectifier IR
IRF1404LPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IRF1404S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …‡
Min. Typ. Max.
40 ––– –––
––– 0.036 –––
––– 0.00350.004
2.0 ––– 4.0
106 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 160 200
––– 35 –––
––– 42 60
––– 17 –––
––– 140 –––
––– 72 –––
––– 26 –––
––– 7.5 –––
––– 7360 –––
––– 1680 –––
––– 240 –––
––– 6630 –––
––– 1490 –––
––– 1540 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 95A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 60A‡
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 95A
VDS = 32V
VGS = 10V „‡
VDD = 20V
ID = 95A
RG = 2.5
RD = 0.21„‡
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5 ‡
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 95A. (See Figure 12)
ƒ ISD 95A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 162†
A
showing the
integral reverse
G
––– ––– 650
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V „
––– 71 110 ns TJ = 25°C, IF = 95A
––– 180 270 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
‡ Use IRF1404 data and test conditions.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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