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L-314EIR1C Ver la hoja de datos (PDF) - Para Light Electronics

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L-314EIR1C Receiver Module Para-Light
Para Light Electronics Para-Light
L-314EIR1C Datasheet PDF : 14 Pages
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L-32XOPT1XX 3.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Part No.
PD (mw)
V(BR)R (V)
Topr
Tstg
L-32XOPT1XX
10
5
-35ºC to 85ºC
PARAMETER Power Dissipation
Reverse Voltage
Operating Temperature
Range
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
-35ºC to 85ºC
Storage Temperature
Range
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
BVCEO (V)
BVECO (V)
ICEO (nA)
VCE (s)(V)
tR/tF (uS)
lC (mA)
(nm)
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
L-32ROPT1D1 30
5
100
0.4
15/15
0.2 0.6
900 940
L-32AOPT1D1 30
5
100
0.4
15/15
0.6 1.0
900 940
TEST
CONDITION
IC=100uA
Ee=0mW/cm2
PARAMETER
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
IE=100uA
Ee=0mW/cm2
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
VE=20V
Ee=0mW/cm2
COLLECTOR
DARK
CURRENT
IC=2mA
Ee=0.5mW/cm2
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
D1,D2=BLACK
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-7
VCE=5V
IC=1mA
RL=1000
RISE/FALL
TIME
VCE=5V
Ee=0.1mW/cm2
ON STATE
COLLECTOR
CURRENT
SPECTRAL
SENSITIVITY
WAVELENGTH
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