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KTD863G-Y-T9N-B View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
KTD863G-Y-T9N-B
UTC
Unisonic Technologies UTC
KTD863G-Y-T9N-B Datasheet PDF : 0 Pages
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
60
V
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
DC
Pulse
IC
ICP
1
2
A
A
Collector Power Dissipation
PC
1
W
Junction Temperature
Storage Temperature Range
TJ
150
°C
TSTG
-55~+150
°C
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE1
SYMBOL
BVCEO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
fT
Cob
TEST CONDITIONS
IC=1mA, IB=0
VCB=50V, IE=0
VEB=4V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=50mA,VCE=2V
IC=1A,VCE=2V
IC=50mA, VCE=10V
VCB=10V, f=1MHz, IE=0
MIN TYP MAX UNIT
60
V
1 µA
1 μA
0.15 0.5 V
0.85 1.2 V
60
320
30
150
MHz
12
pF
RANK
RANGE
O
60~120
Y
100~200
GR
160~320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R211-020.a
 

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