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AM110N06-08P View Datasheet(PDF) - Analog Power

Part Name
Description
Manufacturer
AM110N06-08P
ANALOGPOWER
Analog Power ANALOGPOWER
AM110N06-08P Datasheet PDF : 5 Pages
1 2 3 4 5
Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
AM110N06-08P
VDS (V)
60
PRODUCT SUMMARY
rDS(on) (mΩ)
8 @ VGS = 10V
13 @ VGS = 4.5V
ID(A)
110a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
VGS
±20
TA=25°C
ID
110
IDM
390
IS
110
TA=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol
RθJA
RθJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM110N06-08P_1A
 

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