Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name  

MJE13002G-E-T60-T View Datasheet(PDF) - Unisonic Technologies

Part NameMJE13002G-E-T60-T UTC
Unisonic Technologies UTC
DescriptionNPN EPITAXIAL SILICON TRANSISTOR
MJE13002G-E-T60-T Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMP)
80
60
Tj=150?
40
30
25?
20
-55?
10
8
VCE=2V
6
- - - - - -VCE=5V
4
0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1
2
DC Current Gain
IB, BASE CURRENT (AMP)
2
Tj=25?
1.6
1.2
Ic=0.1A 0.3A 0.5A 1A 1.5A
0.8
0.4
0
0.02 0.05 0.01 0.02 0.05 0.1 0.2
0.5 1 2
Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
1.4
VBE(sat)@IC/IB=3
1.2
- - - - - - VBE(on)@VCE=2V
1
Tj=-55°C
25°C
0.8
25°C
0.6
150°C
0.4
0.02 0.03 0.05 0.070.1
0.2 0.3 0.5 0.7 1
2
Base-Emitter Voltage
IC, COLLECTOR CURRENT (AMP)
0.35
0.3
0.25
IC/IB=3
0.2
Tj=-55°C
0.15
25°C
0.1
0.05
150°C
0
0.02 0.03 0.05 0.070.1
0.2 0.3 0.5 0.7 1
2
Collector-Emitter Saturation Region
VBE,BASE-EMITTER VOLTAGE (VOLTS)
4
10
VCE=250V
3
10
Tj=150°C
2
10
125°C
100°C
1
10
75°C
50°C
0
10
25°C
-1
REVERSE
10
-0.4
-0.2
0
FORWARD
+0.2
+0.4
+0.
6
Collector Cutoff Region
VR,REVERSE VOLTAGE (VOLTS)
500
300
200
Cib
100
70
50
30
20
Cob
10
7
5
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
Capacitance
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 9
QW-R204-014.C
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]