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MJE13002G-B-T92-K View Datasheet(PDF) - Unisonic Technologies

Part NameMJE13002G-B-T92-K UTC
Unisonic Technologies UTC
DescriptionNPN EPITAXIAL SILICON TRANSISTOR
MJE13002G-B-T92-K Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
SYMBOL
VCEO(SUS)
Collector Cutoff Current
ICEV
SECOND BREAKDOWN
Second Breakdown Collector Current with
bass forward biased (See Figure 5)
Clamped Inductive SOA with base reverse
biased (See Figure 6)
DC Current Gain
IS/IB
RBSOA
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
Output Capacitance
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2 V
IC=1 A, VCE=2 V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A,TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
IC=1A, IB=0.25A,TC=100°C
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle1%
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
„ CLASSIFICATION OF hFE1
MIN TYP MAX UNIT
300
1
5
8
40
5
25
0.5
1V
3
1
1
1.2 V
1.1
4 10
21
MHz
pF
0.05 0.1 μs
0.5 1 μs
2 4 μs
0.4 0.7 μs
1.7 4 μs
0.29 0.75 μs
0.15
μs
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R204-014.C
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