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MJE13002G-D-T60-R View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13002G-D-T60-R NPN EPITAXIAL SILICON TRANSISTOR UTC
Unisonic Technologies UTC
MJE13002G-D-T60-R Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
TA=25°C
Total Power Dissipation
Derate above 25°C
TC=25°C
Derate above 25°C
Junction Temperature
Storage Temperature
„ THERMAL CHARACTERISTICS
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
Junction to Case
TO-126
θJC
25
°C/W
3.12
TO-92
Junction to Ambient
TO-126
θJA
122
°C/W
89
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275
°C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R204-014.C
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