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MJE13002G-E-D-T92-K View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13002G-E-D-T92-K NPN EPITAXIAL SILICON TRANSISTOR UTC
Unisonic Technologies UTC
MJE13002G-E-D-T92-K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
„ SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when Tc25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case
tem-perature by using the appropriate curve on Figure 7.
TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified
under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA
characteristics.
VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS)
10
5
10µS
2
100µS
1
5.0ms
0.5
dc
1.0ms
0.2
Tc=25?
0.1
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
0.05
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.02
0.01
5
10
20
50 100 200 300 500
Fig 5. Active Region Safe Operating Area
IC, CASE TEMPERATURE (? )
1
SECOND BREAKDOWN
DERATING
0.8
0.
6
THERMAL
0.4
DERATING
0.2
0
20
40
60
80
100
120 140 160
Fig 7. Forward Bias Power Derating
VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS)
1.6
1.2
Tj? 100?
0.8
IB1=1A
VBE(off)=9V
0.4
5V
3V
0
0
100
1.5V
200
30
0
400
500 600 700
800
Fig 6. Reverse Bias Safe Operating Area
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R204-032.A
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