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MJE13002G-E-B-T92-K View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
MJE13002G-E-B-T92-K
UTC
Unisonic Technologies UTC
MJE13002G-E-B-T92-K Datasheet PDF : 0 Pages
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
„ APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
VCC
0.001µF
1N4933 33
MJE210
L MR826*
pw 5V
DUTY CYCLE? 10%
tr,tf? 10ns
68
33 1N4933
2N2222
1K
1K
+5V
RB
IB
1N4933
0.02µF 270
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1K
T.U.T.
2N2905
MJE200
47
1/2W 100
-VBE(off)
IC
Vclamp
*SELECTEDFOR? 1KV
5.1K
VCE
51
Coil Data :
VCC=20V
Ferroxcube core #6656
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
Lcoil=50mH
Output Waveforms
OUTPUT WAVEFORMS
IC
IC(pk)
t1
VCE
VCE or
Vclamp
TIME
tf CLAMPED
t
tf
t
t2
t1 Adjusted to
Obtain Ic
Lcoil(Icpk)
t1=
Vcc
Lcoil(Icpk)
t2= Vclamp
Test Equipment
Scope-Tektronics
475 or Equivalent
Resistive
Switching
+125V
Rc
TUT
RB
SCOPE
D1
-4.0V
VCC=125V
RC=125
D1=1N5820 or
Equiv.
RB=47
+10.3V
25μS
0
-8.5V
tr,tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
IC
(AMP)
TC
TSV
(°C) (μs)
0.5
25
1.3
100 1.6
1
25
1.5
100 1.7
Table 2. Typical Inductive Switching Performance
TRV
(μs)
0.23
0.26
0.10
0.13
TFI
(μs)
0.30
0.30
0.14
0.26
TTI
(μs)
0.35
0.40
0.05
0.06
TC
(μs)
0.30
0.36
0.16
0.29
1.5
25
100
1.8 0.07 0.10 0.05 0.16
3
0.08 0.22 0.08 0.28
Note: All Data Recorded in the inductive Switching Circuit Table 1
Fig 1. Inductive Switching Measurements
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R204-032.A
 

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