Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name  

MJE13002G-E-D-T6S-R View Datasheet(PDF) - Unisonic Technologies

Part NameMJE13002G-E-D-T6S-R UTC
Unisonic Technologies UTC
DescriptionNPN EPITAXIAL SILICON TRANSISTOR
MJE13002G-E-D-T6S-R Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SECOND BREAKDOWN
DC Current Gain
Collector-Emitter Saturation Voltage
SYMBOL
VCEO(SUS)
ICEV
hFE1
hFE2
hFE3
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
Output Capacitance
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2 V
IC=1 A, VCE=2 V
IC=200mA, VCE=10V
IC=0.5A, IB=0.1A
IC=1A, IB=0.2A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle1%
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
„ CLASSIFICATION OF hFE1
MIN TYP MAX UNIT
300
1
5
8
40
5
25
9
40
0.8
1.8 V
3
1
V
1.2
4 10
21
MHz
pF
0.05 0.1 μs
0.5 1 μs
2 4 μs
0.4 0.7 μs
1.7 4 μs
0.29 0.75 μs
0.15
μs
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R204-032.A
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]