Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MJE13002G-E-D-T92-K View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13002G-E-D-T92-K NPN EPITAXIAL SILICON TRANSISTOR UTC
Unisonic Technologies UTC
MJE13002G-E-D-T92-K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
TA=25°C
TO-92
TO-126S
Derate
TO-92
Total Power Dissipation
above 25°C TO-126S
TO-92
TC=25°C TO-126S
Derate
TO-92
above 25°C TO-126S
Junction Temperature
Storage Temperature
„ THERMAL CHARACTERISTICS
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.0
1.4
8
11.2
5
40
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
Junction to Case
TO-126S
θJC
25
°C/W
3.12
TO-92
Junction to Ambient
TO-126S
θJA
122
89
°C/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275
°C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R204-032.A
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]