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MJE13001-PL-A-T92-A-K View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13001-PL-A-T92-A-K NPN SILICON TRANSISTOR UTC
Unisonic Technologies UTC
MJE13001-PL-A-T92-A-K Datasheet PDF : 3 Pages
1 2 3
MJE13001-P
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
600
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
200
mA
Collector Power Dissipation
PC
750
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
„ CLASSIFICATION OF hFE1*
RANK A
B
C
D
RANGE 10-15 15-20 20-25 25-30
SYMBOL
BVCBO
BVCEO
BVEBO
VBE
ICBO
ICEO
IEBO
TEST CONDITIONS
IC=100 μA, IE=0
IC=1mA, IB=0
IE=100 μA, IC=0
IE=100 mA
VCB=600V,IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A
hFE1*
hFE2
VCE(SAT)
VBE(SAT)
VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
fT
IC=20mA,VCE=20V,f=1MHz
tS
IC=50mA, IB1=-IB2=5mA,
tF
VCC=45V
E
F
G
H
I
30-35 35-40 40-45 45-50 50-55
MIN TYP MAX UNIT
600
V
400
V
7
V
1.1 V
100 μA
200 μA
100 μA
10
70
5
0.5 V
1.2 V
8
MHz
1.5 μs
0.3 μs
J
K
L
55-60 60-65 65-70
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-088,A
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