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Part Name  

IRF1010N View Datasheet(PDF) - International Rectifier

Part NameIRF1010N IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF1010N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF1010N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+
Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[ VDD]
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
www.irf.com
7
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