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Part Name  

IRF1010N View Datasheet(PDF) - International Rectifier

Part NameIRF1010N IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF1010N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF1010N
6000
5000
4000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
2000
Coss
1000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 43A
16
12
VDS = 44V
VDS = 27V
VDS = 11V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80 100 120
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1
TJ = 25° C
0.1
0.0
VGS = 0 V
0.6
1.2
1.8
2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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