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Part Name  

IRF1010N View Datasheet(PDF) - International Rectifier

Part NameIRF1010N IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF1010N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF1010N
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 175° C
10
V DS = 25V
20µs PULSE WIDTH
1
4
6
8
10
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 85A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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