IRF1010N
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energyย
Min. Typ. Max. Units
Conditions
55 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.058 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ โโโ 11 mโฆ VGS = 10V, ID = 43A ย
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
32 โโโ โโโ S VDS = 25V, ID = 43Aย
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 20V
โโโ โโโ -100
VGS = -20V
โโโ โโโ 120
ID = 43A
โโโ โโโ 19 nC VDS = 44V
โโโ โโโ 41
VGS = 10V, See Fig. 6 and 13
โโโ 13 โโโ
VDD = 28V
โโโ
โโโ
76 โโโ
39 โโโ
ns
ID = 43A
RG = 3.6โฆ
โโโ 48 โโโ
VGS = 10V, See Fig. 10 ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 3210 โโโ
VGS = 0V
โโโ 690 โโโ
VDS = 25V
โโโ 140 โโโ pF ฦ = 1.0MHz, See Fig. 5
โโโ 1030ย
250ย mJ IAS = 4.3A, L = 270ยตH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 85ย A showing the
integral reverse
G
โโโ โโโ 290
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 43A, VGS = 0V ย
โโโ 69 100 ns TJ = 25ยฐC, IF = 43A
โโโ 220 230 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย ISD โค 43A, di/dt โค 210A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Starting TJ = 25ยฐC, L = 270ยตH
ย Pulse width โค 400ยตs; duty cycle โค 2%.
RG = 25โฆ, IAS = 43A, VGS=10V (See Figure 12) ย
This is a typical value at device destruction and represents
operation outside rated limits.
ย This is a calculated value limited to TJ = 175ยฐC .
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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