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74LVC86A View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
74LVC86A Low-Voltage CMOS Quad 2-Input XOR Gate With 5 V−Tolerant Inputs ON-Semiconductor
ON Semiconductor ON-Semiconductor
74LVC86A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
74LVC86A
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
−405C to +855C
−405C to +1255C
Symbol
Parameter
Conditions
Min Typ1 Max Min Typ1 Max Unit
tpd
Propagation Delay (Note 5)
VCC = 1.2 V
− 11.0 −
ns
VCC = 1.65 V to 1.95 V 0.5 4.1 9.8 0.5
− 11.4
ns
VCC = 2.3 V to 2.7 V
0.5 2.4 5.6 0.5
6.5
VCC = 2.7 V
0.5 2.5 5.8 0.5
7.0
VCC = 3.0 V to 3.6 V
0.5 2.2 5.0 0.5
6.0
tsk(0) Output Skew Time (Note 6)
VCC = 3.0 V to 3.6 V
1.0
1.5
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
5. tpd is the same as tPLH and tPHL.
6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
TA = +25°C
Min Typ Max Unit
VOLP Dynamic LOW Peak Voltage (Note 7) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.6
VOLV Dynamic LOW Valley Voltage (Note 7) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
−0.8
V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.6
7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
4.0
pF
COUT Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
5.0
pF
CPD
Power Dissipation Capacitance
(Note 8)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
12.5
VCC = 2.3 V to 2.7 V
16.3
VCC = 3.0 V to 3.6 V
19.7
8. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching
S(CL x VCC2 x fo) = sum of the outputs.
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