ML144111 View Datasheet(PDF) - LANSDALE Semiconductor Inc.
Part Name
Description
Manufacturer
ML144111 Datasheet PDF : 8 Pages
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ML144110, ML144111
LANSDALE Semiconductor, Inc.
MAXIMUM RATINGS* (Voltages referenced to VSS)
Parameter
Symbol
Value
Unit
DC Supply Voltage
Input Voltage, All Inputs
DC Input Current, per Pin
VDD
Vin
I
– 0.5 to + 18
V
– 0.5 to VDD + 0.5
V
± 10
mA
Power Dissipation (Per Output)
TA = 70°C, MC144110
MC144111
TA = 85°C, MC144110
MC144111
POH
mW
30
50
10
20
Power Dissipation (Per Package)
PD
TA = 70°C, MC144110
MC144111
TA = 85°C, MC144110
MC144111
mW
100
150
25
50
Storage Temperature Range
Tstg
– 65 to + 150
°C
* Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields; however, it is ad-
vised that precautions be taken to avoid
application of voltage higher than maximum
rated voltages to this high–impedance circuit.
For proper operation it is recommended that
Vin and Vout be constrained to the range VSS ≤
(Vin or Vout) ≤VDD.
Unused inputs must always be tied to an
appropriate logic voltage level (e.g., either VSS
or VDD).
ELECTRICAL CHARACTERISTICS (Voltages referenced to VSS, TA = 0 to 85°C unless otherwise indicated)
Symbol
Parameter
Test Conditions
VDD
Min
VIH High–Level Input Voltage (Din, ENB, CLK)
5
3.0
10
3.5
15
4
Max Unit
—
V
—
—
VIL Low–Level Input Voltage (Din, ENB, CLK)
5
—
0.8
V
10
—
0.8
15
—
0.8
IOH High–Level Output Current (Dout)
Vout = VDD – 0.5 V
IOL Low–Level Output Current (Dout)
Vout = 0.5 V
IDD Quiescent Supply Current
ML144110 Iout = 0 µA
ML144111
5
– 200
—
µA
5
200
—
µA
15
—
12
mA
15
—
8
Iin
Vnonl
Input Leakage Current (Din, ENB, CLK)
Nonlinearity Voltage (Rn Out)
Vin = VDD or 0 V
See Figure 1
15
—
±1
µA
5
—
100 mV
10
—
200
15
—
300
Vstep Step Size (Rn Out)
See Figure 2
5
19
137 mV
10
39
274
15
58
411
Voffset
IE
hFE
Offset Voltage from VSS
Emitter Leakage Current
DC Current Gain
Din = $00, See Figure 1
VRn Out = 0 V
IE = 0.1 to 10.0 mA
TA = 25°C
—
—
1
LSB
15
—
10
µA
—
40
—
—
VBE Base–to–Emitter Voltage Drop
IE = 1.0 mA
—
0.4
0.7
V
Page 3 of 8
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