DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

F10GZ47 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
F10GZ47 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SF10GZ47,SF10JZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current and
Repetitive Peak Reverse Current
Peak OnState Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate NonTrigger Voltage
Critical Rate of Rise of OffState Voltage
Holding Current
Latching current
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
VGD
dv / dt
IH
IL
Rth (jc)
VDRM = VRRM = Rated
ITM = 30A
VD = 6V, RL = 10
VD = Rated × 2 / 3, Tc = 125°C
VDRM = Rated, Tc = 125°C
Exponential Rise
VD = 6V, ITM = 1A
VD = 6V, f = 50Hz, tgw = 50µs
iG = 30mA
Junction to Case
MIN TYP. MAX UNIT
10
µA
1.5
V
1.0
V
10
mA
0.2
V
50
V / µs
40
mA
50
mA
3.4 °C / W
MARKING
*1
MARK
F10GZ47
F10JZ47
TYPE
NAME
SF10GZ47
SF10JZ47
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]