KTA1042DO View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
| KTA1042DO Datasheet PDF : 0 Pages | |||
Product specification
TO-252-2L Plastic-Encapsulate Transistors
KTA1042D TRANSISTOR (PNP)
FEATURES
Low Collector-Emitter Saturation Voltage
APPLICATIONS
General Purpose Application
TO-252-2L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
* Pulse test
Symbol
V(BR)CBO*
V
*
(BR)CEO
V(BR)EBO*
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=-1mA ,IE=0
IC=-50mA, IB=0
IE=-1mA,IC=0
VCB=-100V,IE=0
VEB=-5V,IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-4A
IC=-4A,IB=-0.4A
VCE=-5V, IC=-4A
VCE=-5V ,IC=-1A
VCB=-10V ,IE=0,f=1MHz
Min Typ
-100
-100
-5
70
20
30
270
CLASSIFICATION OF hFE(1)
Rank
Range
O
70-140
Y
120-240
Max
-100
-1
240
-2
-1.5
Unit
V
V
V
μA
mA
V
V
MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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