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Part Name
Description
BUZ11A View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ11A
SIPMOS ® Power Transistor
Siemens AG
BUZ11A Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 11 A
Not for new design
Power dissipation
P
tot
=
Æ’
(
T
C
)
80
W
P
tot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25°C
10
3
A
I
D
10
2
10
1
/
I
D
=
V
DS
R
DS(on)
t
p
= 7.5µs
10 µs
100 µs
1 ms
10 ms
10
0
10
0
DC
10
1
V 10
2
V
DS
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
28
A
24
I
D
22
20
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Semiconductor Group
5
07/96
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