D1619 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
D1619 Datasheet PDF : 1 Pages
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SMD Type
Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Transistors
Product specification
2SD1619
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse)
ICP
2
A
Collector dissipation
PC
500
mW
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 20 V, IE=0
IEBO VEB = 4 V, IC=0
hFE VCE = 2 V , IC = 50 mA
fT VCE = 10 V , IC = 50 mA
Cob VCB = 10 V , f = 1.0MHz
VCE(sat) IC = 500 mA , IB = 50 mA
VBE(sat) IC = 500 mA , IB = 50 mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
R
100 200
DB
S
140 280
T
200 400
U
280 560
Min Typ Max Unit
0.1 ìA
0.1 ìA
100
560
180
MHz
15
pF
0.1 0.3 V
0.85 1.2 V
25
V
25
V
5
V
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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