BUZ22 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BUZ22

SIPMOS ® Power Transistor

Infineon Technologies 

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 22

Type

BUZ 22

VDS

100 V

ID

34 A

RDS(on)

0.055 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 27 ˚C

Pulsed drain current

TC = 25 ˚C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

ID = 34 A, VDD = 25 V, RGS = 25 Ω

L = 285.5 µH, Tj = 25 ˚C

Gate source voltage

Power dissipation

TC = 25 ˚C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Pin 1

G

Pin 2

D

Pin 3

S

Package

TO-220 AB

Ordering Code

C67078-S1333-A2

Symbol

ID

IDpuls

IAR

EAR

EAS

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Values

Unit

A

34

136

34

15

mJ

220

± 20

V

W

125

-55 ... + 150 ˚C

-55 ... + 150

≤1

K/W

75

E

55 / 150 / 56

Data Sheet

1

05.99

Share Link: