NE202930
A Business Partner of Renesas Electronics Corporation.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
Emitter Cut-off Current
DC Current Gain
IEBO
VEB = 1 V, IC = 0
hFE Note1 VCE = 5 V, IC = 5 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
fT
VCE = 5 V, IC = 30 mA, f = 1 GHz
⏐S21e⏐2 VCE = 5 V, IC = 30 mA, f = 1 GHz
Noise Figure (1)
NF1
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
Noise Figure (2)
NF2
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
Associated Gain (1)
Ga1 VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Ga2
Cre Note 2
MSG Note 3
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
Output 3rd Order Intercept Point
OIP3
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG = S21
S12
MIN.
−
−
85
−
11.5
−
−
10.0
−
−
13.5
−
−
TYP.
−
−
140
11.0
13.5
1.15
1.5
12.0
13.5
0.6
15.5
19
32
MAX.
100
100
205
−
−
1.5
−
−
−
0.8
−
−
−
Unit
nA
nA
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
hFE CLASSIFICATION
Rank
Marking
hFE Value
YFB
R7D
85 to 205
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
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