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NE202930-T1 View Datasheet(PDF) - California Eastern Laboratories.

Part Name
Description
Manufacturer
NE202930-T1
CEL
California Eastern Laboratories. CEL
NE202930-T1 Datasheet PDF : 0 Pages
A Business Partner of Renesas Electronics Corporation.
Preliminary
NE202930
Silicon NPN Epitaxial High Frequency Transistor
Data Sheet
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
FEATURES
High transition frequency fT = 11 GHz TYP.
Ideal for low noise and low distortion amplification
Suitable for equipments of low collector voltage (Less than 5 V)
Suitable for up to 1 GHz applications
APPLICATIONS
LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7D"
ORDERING INFORMATION
Part Number Order Number
Package
Marking
Supplying Form
NE202930-T1
NE202930-T1-A
3-pin super
minimold (30 PKG)
(Pb-Free)
R7D Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
(Base Short)
Collector to Emitter Voltage
(Base Open)
Emitter to Base Voltage
Collector Current
Total Power Dissipation Note
Junction Temperature
Storage Temperature
Note: Free air
Symbol
VCBO
VCES
VCEO
VEBO
IC
Ptot
Tj
Tstg
Ratings
9
9
6
2
100
150
150
65 to +150
Unit
V
V
V
V
mA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 1 of 6
 

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