3N150 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

3N150

N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF

STMicroelectronics 

STFW3N150, STP3N150, STW3N150

Table 7.

Symbol

Switching times

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Electrical characteristics

Test conditions

VDD = 750 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Min. Typ. Max. Unit

24

ns

47

ns

-

-

45

ns

61

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 2.5 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V, Tj = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.5 A

-

10 A

-

1.6 V

410

ns

- 2.4

µC

11.7

A

540

ns

- 3.3

µC

12.3

A

Doc ID 13102 Rev 9

5/15

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