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FCP16N60 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FCP16N60
Fairchild
Fairchild Semiconductor Fairchild
FCP16N60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom : 5.5 V
100
10-1
ĝ Notes :
1. 250ɴs Pulse Test
2. TC = 25ŀ
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
0.3
VGS = 10V
0.2
VGS = 20V
0.1
ĝ Note : TJ = 25ŀ
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID, Drain Current [A]
Figure 2. Transfer Characteristics
102
101
100
2
150ŀ
25ŀ
-55ŀ
ĝ Note
1. VDS = 40V
2. 250ɴs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150ŀ
25ŀ
ĝ Notes :
1. VGS = 0V
2. 250ɴs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
ĝ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
ĝ Note : ID = 20A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
3
FCP16N60 / FCPF16N60 Rev. A
www.fairchildsemi.com
 

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