Package Marking and Ordering Information
Device Marking
FCP16N60
FCPF16N60
Device
FCP16N60
FCPF16N60
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250PA, TJ = 25qC
600
VGS = 0V, ID = 250PA, TJ = 150qC
--
'BVDSS
/ 'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, Referenced to 25qC
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 16A
--
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125qC
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250PA
VGS = 10V, ID = 8A
VDS = 40V, ID = 8A
--
--
--
--
3.0
--
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 16A
RG = 25:
VDS = 480V, ID = 16A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS =16A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 16A
dIF/dt =100A/Ps
--
--
--
--
(Note 4)
--
Typ
--
650
0.6
700
--
--
--
--
--
0.22
11.5
1610
870
65
45
110
42
95
150
45
50
9.2
25
--
--
--
450
8.2
Max Units
--
V
--
V
--
V/qC
--
V
1
PA
10
PA
100 nA
-100 nA
5.0
V
0.26
:
--
S
2100 pF
1135 pF
--
pF
58
pF
--
pF
90
ns
200 ns
320 ns
95
ns
66
nC
12
nC
--
nC
16
A
48
A
1.4
V
--
ns
--
PC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25:, Starting TJ = 25qC
3. ISD d 16A, di/dt d 200A/Ps, VDD d BVDSS, Starting TJ = 25qC
4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FCP16N60 / FCPF16N60 Rev. A
www.fairchildsemi.com