DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

FDS6676AS View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6676AS
Fairchild
Fairchild Semiconductor Fairchild
FDS6676AS Datasheet PDF : 0 Pages
Typical Characteristics (continued)
10
ID = 14.5A
8
6
4
VDS = 10V
20V
15V
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
2000
1500
1000
500
Crss
0
0
Coss
f = 1MHz
VGS = 0 V
Ciss
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676AS Rev B2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]