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FDS6676AS(2005-4) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6676AS
(Rev.:2005-4)
Fairchild
Fairchild Semiconductor Fairchild
FDS6676AS Datasheet PDF : 0 Pages
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.1
0.01
TA = 125° C
0.001
TA = 100° C
10nS/DIV
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recov-
ery characteristics of the body diode of an equivalent size MOS-
FET produced without SyncFET (FDS6676).
0.0001
0.00001
0
TA = 25° C
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
10nS/DIV
Figure 13. Non-SyncFET (FDS6676) body diode
reverse recovery characteristic.
6
FDS6676AS Rev. A (X)
www.fairchildsemi.com
 

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