FDS6676AS(2005-4) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
| FDS6676AS Datasheet PDF : 0 Pages | |||
April 2005
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
Features
■14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V
RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
â– Includes SyncFET Schottky body diode
â– Low gate charge (45nC typical)
â– High performance trench technology for extremely low
RDS(ON) and fast switching
â– High power and current handling capability
Applications
â– DC/DC converter
â– Low side notebook
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efï¬ciency, providing a low RDS(ON) and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R θ JA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Package Marking and Ordering Information
Device Marking
FDS6676AS
FDS6676AS
Device
FDS6676AS
FDS6676AS_NL (Note 3)
Reel Size
13’’
13’’
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS6676AS Rev. A (X)
www.fairchildsemi.com
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