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MSAFX24N50A View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
MSAFX24N50A
Microsemi
Microsemi Corporation Microsemi
MSAFX24N50A Datasheet PDF : 2 Pages
1 2
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAFX24N50A
Features
Ultrafast body diode
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
500 Volts
24 Amps
230 m
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
500
500
+/-20
+/-30
24
20
96
24
30
tbd
5.0
300
-55 to +150
-55 to +150
24
96
0.25
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
GATE
SOURCE
Datasheet# MSC0265B
 

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