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H02N60J 查看數據表(PDF) - Hi-Sincerity Microelectronics

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H02N60J N-Channel Power Field Effect Transistor Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
H02N60J Datasheet PDF : 6 Pages
1 2 3 4 5 6
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case Max.
RθJA
Thermal Resistance Junction to Ambient Max.
Value
TO-251 / TO-252
TO-220AB
TO-220FP
62.5
Units
2
2
°C/W
3.3
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
gFS
Forward Transconductance (VDS50V, ID=1A)*
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
(VDD=300V, ID=2A, RG=18,
VGS=10V)*
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
(VDS=300V, ID=6A, VGS=10V)*
Qgd
Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 -
-
V
-
-
1
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
2
-
4
V
-
-
4.4
1
-
- mhos
- 435 -
-
56
-
pF
-
9.2
-
-
12
-
-
21
-
ns
-
30
-
-
24
-
-
13 22
-
2
-
nC
-
6
-
-
4.5
-
nH
-
7.5
-
nH
Source-Drain Diode
Symbol
VSD
Forward On Voltage(1)
ton
Forward Turn-On Time
trr
Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=2A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
-
-
1.6
V
-
**
-
ns
- 340 -
ns
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
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