Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

H02N60I 查看數據表(PDF) - Hi-Sincerity Microelectronics

零件编号产品描述 (功能)生产厂家
H02N60I N-Channel Power Field Effect Transistor Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
H02N60I Datasheet PDF : 6 Pages
1 2 3 4 5 6
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 1/6
H02N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60 Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab
1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60 Series
G
Symbol:
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
Derate above 25°C
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±20
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]