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STP2N60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP2N60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STP2N60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 35 V ID = 2 A
RG = 50
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 2.9 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 2.9 A VG S = 10 V
Min.
Typ.
25
110
75
33
7
13
Max.
40
150
45
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 2.9 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
70
20
100
Max.
95
30
130
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 2.9 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 2.9 A di/dt = 100 A/µs
VDD = 80 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
2.9
11
Unit
A
A
2
V
500
ns
7
µC
28
A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
 

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