STP2N60FI View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP2N60FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics 

STP2N60

STP2N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STP2N60

STP2N60FI

VDSS

600 V

600 V

R DS( on)

< 3.5 Ω

< 3.5 Ω

ID

2.9 A

2.2 A

s TYPICAL RDS(on) = 3.2 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

3

2

1

TO-220

3

2

1

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at T c = 25 oC

ID

Drain Current (continuous) at T c = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

December 1996

Val ue

STP2N60

S T P2 N6 0F I

600

600

± 20

2.9

2.2

1.7

1.3

11

11

70

35

0. 56

0. 28



2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/10

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