FCH072N60F View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FCH072N60F Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.2
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
0.12
0.10
0.08
0.06
0.04
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
50
100
150
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
Coss
100 *Note:
1. VGS = 0V
2. f = 1MHz
Crss
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
300
*Notes:
1. VDS = 10V
100 2. 250μs Pulse Test
150oC
10
25oC
-55oC
1
2
4
6
8
10
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
10
1
150oC
0.1
25oC
-55oC
0.01
1E-3
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 26A
0
0
30 60 90 120 150 180
Qg, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
FCH072N60F Rev. C3
3
www.fairchildsemi.com
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