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IRFP23N50LPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFP23N50LPBF
IR
International Rectifier IR
IRFP23N50LPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP23N50LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.27
RDS(on)
Static Drain-to-Source On-Resistance ––– 0.190
VGS(th)
Gate Threshold Voltage
3.0 –––
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
IGSS
Gate-to-Source Forward Leakage
––– –––
Gate-to-Source Reverse Leakage
––– –––
RG
Internal Gate Resistance
––– 1.2
Max.
–––
–––
0.235
5.0
50
2.0
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
f V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
12 ––– –––
Qg
Total Gate Charge
––– ––– 150
Qgs
Gate-to-Source Charge
––– ––– 44
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 72
td(on)
Turn-On Delay Time
––– 26 –––
tr
Rise Time
––– 94 –––
td(off)
Turn-Off Delay Time
––– 53 –––
tf
Fall Time
––– 45 –––
Ciss
Input Capacitance
––– 3600 –––
Coss
Output Capacitance
––– 380 –––
Crss
Reverse Transfer Capacitance
––– 37 –––
Coss
Output Capacitance
––– 4800 –––
Coss
Output Capacitance
––– 100 –––
Coss eff.
Effective Output Capacitance
––– 220 –––
Coss eff. (ER) Effective Output Capacitance
––– 160 –––
Units
Conditions
S VDS = 50V, ID = 14A
ID = 23A
f nC VDS = 400V
VGS = 10V, See Fig. 7 & 15
VDD = 250V
ns ID = 23A
f RG = 6.0
VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
g VGS = 0V,VDS = 0V to 400V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
410
23
37
Units
mJ
A
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.34
–––
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
‚ Starting TJ = 25°C, L = 1.5mH, RG = 25,
IAS = 23A, dv/dt = 14V/ns. (See Figure 12).
ƒ ISD 23A, di/dt 430A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
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