Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SK3911 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π -MOSVI)
Toshiba
2SK3911 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3911
1000
800
R
DS (ON)
– Tc
COMMON SOURCE
VGS
=
10 V
PULSE TEST
600
400
ID
=
20 A
5
200
10
0
−
80
−
40
0
40
80
120 160
CASE TEMPERATURE Tc (°C)
I
DR
−
V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
10
1
5
3
1
VGS
=
0 V
0.1
0
−
0.4
−
0.8
−
1.2
−
1.6
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
10000
1000
100
C – V
DS
Ciss
Coss
COMMON SOURCE
10
VGS
=
0 V
f = 1 MHz
Tc
=
25°C
Crss
1
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
−
Tc
5
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
4
PULSE TEST
3
2
1
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
200
160
120
80
40
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
VDS
400
20
COMMON SOURCE
ID
=
20 A
Tc
=
25°C
PULSE TEST
16
300
200
12
100
VDD
=
400 V
200
8
VGS
100
4
0
0
0
20
40
60
80
100
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]