D1913 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

D1913

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1913

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=?

V(BR)EBO Base-emitter breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2A ; IB=0.2A

VBE

Base-emitter voltage

IC=0.5A ; VCE=5V

ICBO

Collector cut-off current

VCB=40V;IE=0

IEBO

Emitter cut-off current

VEB=4V;IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V

Cob

Output capacitance

IE=0 ; VCB=10V; f=1MHz

MIN TYP. MAX UNIT

60

V

60

V

6

V

0.4

1.0

V

0.8

1.0

V

0.1

mA

0.1

mA

70

280

20

100

MHz

40

pF

hFE-1 classifications

Q

R

S

70-140 100-200 140-280

2

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