BUZ104SE3045 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ104SE3045 Datasheet PDF : 8 Pages
| |||
BUZ 104S
Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 9.6 A, VGS = 10 V
BUZ104S
0.28
Ω
0.24
0.22
0.20
0.18
0.16
0.14
0.12
98%
typ
0.10
0.08
0.06
0.04
0.02
0.00
-60 -20 20 60 100 140 ËšC 200
Tj
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
10 3
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS, ID = 20 µA
5.0
V
4.4
4.0
3.6
3.2
2.8
2.4
max
2.0
1.6
typ
1.2
0.8
0.4
min
0.0
-60 -20 20 60 100 140 ËšC 200
Tj
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 2 BUZ104S
A
pF
Ciss
10 1
10 2
Coss
Crss
10 1
0
10
20
V
40
VDS
10 0
Tj = 25 ËšC typ
Tj = 175 ËšC typ
Tj = 25 ËšC (98%)
Tj = 175 ËšC (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Data Book
7
05.99
|
|
Share Link: 