BUZ104SE3045 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BUZ104SE3045

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 104S

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

VDS≥2*ID*RDS(on)max , ID = 9.6 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 13.5 A,

RG = 33 Ω

gfs

Ciss

Coss

Crss

t d(on)

4

5.8

-S

- 270 340 pF

-

95 120

-

50 65

-

9

15 ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 13.5 A,

RG = 33 Ω

tr

-

22 35

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 13.5 A,

RG = 33 Ω

t d(off)

-

18 30

Fall time

VDD = 30 V, VGS = 10 V, ID = 13.5 A,

RG = 33 Ω

tf

-

17 25

Data Book

3

05.99

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