BUZ 104S
SIPMOS Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175 ˚C operating temperature
VDS
55 V
RDS(on) 0.08 Ω
ID
13.5 A
Type
BUZ104S
BUZ104S E3045A
BUZ104S E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4007-A2 Tube
P-TO263-3-2 Q67040-S4007-A6 Tape and Reel
P-TO263-3-2 Q67040-S4007-A5 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at Tj = 25 ËšC, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 ËšC
TC = 100 ËšC
Pulsed drain current
IDpulse
TC = 25 ËšC
Avalanche energy, single pulse
EAS
ID = 13.5 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 13.5 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ËšC
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 ËšC
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
13.5
9.6
54
52
3.5
6
±20
35
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
ËšC
Data Book
1
05.99