BUZ 104SL
Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 8.8 A, VGS = 4.5 V
BUZ104SL
0.38
Ω
0.32
0.28
0.24
0.20
0.16
98%
typ
0.12
0.08
0.04
0.00
-60 -20 20 60 100 140 ËšC 200
Tj
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
10 3
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS, ID = 20 µA
3.0
V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
max
0.8
0.6
typ
0.4
0.2
min
0.0
-60 -20 20 60 100 140 ËšC 200
Tj
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 2 BUZ104SL
A
pF
10 1
10 2
10 1
0
10
20
V
40
VDS
10 0
Tj = 25 ËšC typ
Tj = 175 ËšC typ
Tj = 25 ËšC (98%)
Tj = 175 ËšC (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Data Book
7
05.99