BD136 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
| BD136 Datasheet PDF : 0 Pages | |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD136 BD138 BD140
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
-0.5
V
VBE
Base-emitter voltage
IC=-500mA ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
VCB=-30V; IE=0 Tj=125℃
-100 nA
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100 nA
hFE-1
DC current gain
IC=-5mA ; VCE=-2V
40
DC current gain
63
250
hFE-2
BD136-10;BD138-10;BD140-10
IC=-150mA ; VCE=-2V
63
160
BD136-16;BD138-16;BD140-16
100
250
体 hFE-3
DC current gain
固I电NC半H导ANGE SEMICONDUCTOR fT
Transition frequency
IC=-500mA ; VCE=-2V
25
IC=-50mA; VCE=-5V ;f=100MHz
160
MHz
2
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