NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
500
hFE
400
006aac457
(1)
300
(2)
200
(3)
100
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. 2PB709BRL: DC current gain as a function of
collector current; typical values
−0.1
IC
(A)
−0.08
−0.06
−0.04
−0.02
IB (mA) = −0.75
−0.7
−0.65 −0.6
−0.55 −0.5
−0.45
−0.4
−0.35
−0.3
−0.25 −0.2
−0.15
−0.1
−0.05
006aac458
0.0
0.0
−2.0
−4.0
−6.0
−8.0 −10.0
VCE (V)
Tamb = 25 °C
Fig 4. 2PB709BRL: Collector current as a function of
collector-emitter voltage; typical values
−1
006aac459
VCEsat
(V)
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. 2PB709BRL: Collector-emitter saturation voltage as a function of collector current; typical values
2PB709BRL_2PB709BSL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
© NXP B.V. 2010. All rights reserved.
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