NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
103
Zth(j-a)
(K/W)
102
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10 0.01
0
006aaa991
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −60 V; IE = 0 A
current
VCB = −60 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = −5 V; IC = 0 A
current
-
-
−10 nA
-
-
−5 μA
-
-
−10 nA
hFE
DC current gain
VCE = −10 V; IC = −2 mA
210 -
460
hFE group R
210 -
340
VCEsat
fT
hFE group S
collector-emitter
saturation voltage
transition frequency
290 -
460
IC = −100 mA;
IB = −10 mA
[1] -
-
−250 mV
VCE = −6 V; IC = −10 mA;
f = 100 MHz
100 200 -
MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
-
3
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2PB709BRL_2PB709BSL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
© NXP B.V. 2010. All rights reserved.
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