Philips Semiconductors
PNP general purpose transistor
Product specification
2PB709AW
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
TYPE NUMBER
2PB709AQW
2PB709ARW
2PB709ASW
MARKING CODE(1)
N5*
N7*
N9*
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM048
Fig.1 Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−45
−6
−100
−200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
2002 Jun 26
2