FQP3N80 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP3N80 Datasheet PDF : 8 Pages
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FQP3N80
800V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 7.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
D
!
"
35
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP3N80
800
3.0
1.9
12
± 30
320
3.0
10.7
4.0
107
0.85
-55 to +150
300
Typ
Max
--
1.17
0.5
--
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000
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